PART |
Description |
Maker |
ICS663 663MILFT 663MLF 663MLFT |
PLL BUILDING BLOCK Phase detector and VCO blocks can be used Lower power CMOS process
|
Integrated Device Technology
|
AP2606AGY-HF AP2606AGY-HF-14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
AP60T06GP-HF |
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
AP99T06GP-HF AP99T06GP-HF-14 |
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic
|
Advanced Power Electronics Corp. Advanced Power Electronics ...
|
SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
AP9575AGI-HF AP9575AGI-HF-14 |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp. Advanced Power Electronics ...
|
AP9998GI-HF |
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
AP9575GP-HF AP9575GS-HF AP9575GP-HF-14 |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp. Advanced Power Electronics ...
|
K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|